Carrier separation effects in hydrogenated amorphous silicon photoconductors with multilayer structures

1 April 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (4) , 166-168
https://doi.org/10.1109/edl.1985.26084

Abstract

Photogenerated electrons and holes can be separated efficiently by the built-in field present in hydrogenated amorphous silicon (a-Si:H) photoconductors with multilayer (ML) structures. Because of the carrier separation, the recombination rate of photogenerated carrier's decreases and this can lead to high photosensitivity and small photoinduced changes in a-Si:H ML photoconductors. We have observed that such carrier separation effects indeed occur in a-Si:H p-i-p type ML photoconductors. Some comments are made on the origin of the photoinduced changes in a-Si:H from the experimental results obtained for the p-i-p type photoconductors.

Keywords

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