Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
- 17 December 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (25) , 3706-3708
- https://doi.org/10.1063/1.122870
Abstract
Normal-incident infrared absorption in the 8–12-μm-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 μm is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures.Keywords
This publication has 21 references indexed in Scilit:
- Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dotsApplied Physics Letters, 1997
- Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dotsJournal of Applied Physics, 1997
- High-resolution x-ray diffraction from multilayered self-assembled Ge dotsPhysical Review B, 1997
- Shell structure and electron-electron interaction in self-assembled InAs quantum dotsEurophysics Letters, 1996
- Normal incident infrared absorption from InGaAs/GaAsquantum dot superlatticeElectronics Letters, 1996
- Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer filmsPhysical Review B, 1996
- Self-Organization in Growth of Quantum Dot SuperlatticesPhysical Review Letters, 1996
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Carrier thermalization in sub-three-dimensional electronic systems: Fundamental limits on modulation bandwidth in semiconductor lasersPhysical Review B, 1994
- Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum DotsPhysical Review Letters, 1994