Silicon-induced local interface dipole in Al/GaAs(001) Schottky diodes
- 21 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (8) , 988-990
- https://doi.org/10.1063/1.110927
Abstract
Al/Si/GaAs(001) diode structures grown by molecular beam epitaxy were examined as a function of the thickness of the Si interface layer and the intensity of the As or Al flux employed during Si deposition. We found that Schottky barriers as low as 0.3–0.4 eV (in the presence of a sufficiently high As flux) or as high as 1.0–1.1 eV (in the presence of a sufficiently high Al flux) can be established on n‐type GaAs at Si coverages in the submonolayer to monolayer range. We therefore associate the tunability of the barrier height with a Si‐induced local interface dipole.Keywords
This publication has 13 references indexed in Scilit:
- Structure and band bending at Si/GaAs(001)-(2×4) interfacesPhysical Review B, 1993
- Control of GaAs Schottky Barrier Height by Ultrathin Molecular beam epitaxy si interface control layerJapanese Journal of Applied Physics, 1993
- Structure and local dipole of Si interface layers in AlAs-GaAs heterostructuresPhysical Review B, 1992
- Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layerApplied Physics Letters, 1991
- Photovoltaic effects in photoemission studies of Schottky barrier formationJournal of Vacuum Science & Technology B, 1990
- Unpinning the GaAs Fermi level with thin heavily doped silicon overlayersIEEE Transactions on Electron Devices, 1990
- Metal contacts to GaAs with 1 eV Schottky barrier heightApplied Physics Letters, 1988
- Atomic structure and properties of polar Ge-GaAs(100) interfacesPhysical Review B, 1981
- Polar heterojunction interfacesPhysical Review B, 1978
- Multiple Oxidation States of Al Observed by Photoelectron Spectroscopy of Substrate Core Level ShiftsPhysical Review Letters, 1976