A numerical simulation of hole and electron trapping due to radiation in silicon dioxide
- 15 October 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (8) , 4490-4495
- https://doi.org/10.1063/1.349083
Abstract
The one-dimensional Poisson, continuity, and the trap rate equations are solved numerically to study the buildup of charge in silicon dioxide due to radiation. The flat-band voltage shift (ΔVfb) is obtained as a function of total dose, the oxide thickness, the applied gate voltage, and the centroid of the trap distribution. The effect of including electron traps is studied. The results of the simulation are found to compare well with experimental data.This publication has 10 references indexed in Scilit:
- Hole trapping in reoxidized nitrided silicon dioxideJournal of Applied Physics, 1989
- A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS TransistorsIEEE Transactions on Nuclear Science, 1987
- Dynamic model for e-beam irradiation of MOS capacitorsJournal of Applied Physics, 1979
- Silicon dioxide and the chalcogenide semiconductors; similarities and differencesAdvances in Physics, 1977
- Time-resolved hole transport inPhysical Review B, 1977
- Avalanche Injection of Holes into SiO2IEEE Transactions on Nuclear Science, 1977
- Model for Thickness Dependence of Radiation Charging in MOS StructuresIEEE Transactions on Nuclear Science, 1976
- Electron irradiation effects in MOS systemsIEEE Transactions on Electron Devices, 1974
- Integration system of a nonlinear transient network-analysis programIEEE Transactions on Circuit Theory, 1970
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969