Electron drift mobility in a-Si : H under extremely high electric field
- 1 August 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 75 (6) , 531-533
- https://doi.org/10.1016/0038-1098(90)90492-t
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Study of A-Si:H drift mobility in subnanosecond time scaleJournal of Non-Crystalline Solids, 1989
- Temperature and electric field dependence of the picosecond electron drift velocity in a-Si:HJournal of Non-Crystalline Solids, 1989
- Tail-state distribution and trapping probability in a-Si:H investigated by time-of-flight experiments and computer simulationsPhilosophical Magazine Part B, 1989
- Features of carriers at very high electric fields in a-Se and a-Si:HJournal of Non-Crystalline Solids, 1987
- Electron drift mobility in amorphous Si: HPhilosophical Magazine Part B, 1986
- Impact ionization and mobilities of charge carriers at high electric fields in amorphous seleniumPhysica Status Solidi (a), 1980