InP/InGaAs double-heterojunction bipolar transistor with step-graded InGaAsP collector

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Abstract
An MOCVD-grown InP/InGaAs double-heterojunction bipolar transistor with a step-graded InGaAsP collector is described. This transistor allows high injection current densities over 2.9 × 105A/cm2, which suggests no significant current blocking related to the wide-gap InP layers. A cutoff frequency of 155GHz and a maximum oscillation frequency of 90GHz are obtained at the collector current density of 1.6 × 105A/cm2.