Room temperature ferromagnetic properties of (Ga, Mn)N
Top Cited Papers
- 19 November 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (21) , 3473-3475
- https://doi.org/10.1063/1.1419231
Abstract
Dilute magnetic semiconductor GaN with a Curie temperature above room temperature has been achieved by manganese doping. By varying the growth and annealing conditions of Mn-doped GaN we have identified Curie temperatures in the range of 228–370 K. These Mn-doped GaN films have ferromagnetic behavior with hysteresis curves showing a coercivity of 100–500 Oe. Structure characterization by x-ray diffraction and transmission electron microscopy indicated that the ferromagnetic properties are not a result of secondary magnetic phases.Keywords
This publication has 6 references indexed in Scilit:
- Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devicesMaterials Letters, 2001
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Properties of ferromagnetic III–V semiconductorsJournal of Magnetism and Magnetic Materials, 1999
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Magnetoresistance peaks in the neighborhood of coercivity in magneto-optical recording mediaJournal of Applied Physics, 1992
- Carrier-concentration–induced ferromagnetism in PbSnMnTePhysical Review Letters, 1986