Thin-film electroluminescence in impurity-doped Al2O3
- 15 September 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (6) , 554-555
- https://doi.org/10.1063/1.91984
Abstract
The discovery of a new thin-film electroluminescence system based on impurity-doped anodic aluminum oxide is reported. Average brightnesses of 30 f L have been observed for devices at room temperature operating at 1 kHz biased at 60 V rms, resulting in 7 mA electronic current and a 10% duty cycle. A new stabilizing layer of manganese oxide permits long-term operation without catastrophic breakdown. While electrical stability is achieved, loss in electroluminescence efficiency is apparent, possibly due to electromigration of the impurity ions.Keywords
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