Gap transit-time effects in fast optoelectronic semiconductor switching devices
- 1 November 1984
- journal article
- research article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 16 (6) , 477-486
- https://doi.org/10.1007/bf00619909
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Picosecond photoconductivity and its applicationsIEEE Journal of Quantum Electronics, 1981
- Picosecond GaP switchesOptics Communications, 1981
- A simple jitter-free picosecond streak cameraOptics Communications, 1981
- Picosecond photoconductivity in radiation-damaged silicon-on-sapphire filmsApplied Physics Letters, 1981
- Active mode-locking of lasers using GaAs and GaP picosecond switchesOptics Communications, 1980
- Pulse shaping by laser-excited solid-state plasmas in siliconElectronics Letters, 1976
- A kilovolt picosecond optoelectronic switch and Pockel’s cellApplied Physics Letters, 1976
- Picosecond optoelectronic switching and gating in siliconApplied Physics Letters, 1975