Scanning-electron-beam annealing of ion-implanted p-n junction diodes

5 July 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (14) , 433-435
https://doi.org/10.1049/el:19790311

Abstract

Scanning-electron-beam annealing of ion-implanted silicon p⁺-n junctions over a range of beam power and exposure conditions is described. Electrical measurements have shown that electron-beam annealing can produce diode characteristics close to those of similar thermally annealed structures.

Keywords

P-N JUNCTION DIODES
DIODE CHARACTERISTICS
EXPOSURE CONDITIONS
SCANNING ELECTRON BEAM
ELECTRICAL MEASUREMENTS
ANNEALING
PLANAR DIODES
ION IMPLANTATION
BEAM POWER
CURRENT VOLTAGE CHARACTERISTICS

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