Applications of dry etching to InP-based laser fabrication

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Abstract
This paper reviews applications of dry etching to the fabrication of InP-based laser diodes. The plasma and ion beam processing techniques and chemistries used to etch InP, InGaAs and InGaAsP are briefly described. The application of these techniques to the fabrication of gratings (for distributed feedback lasers), active stripe mesas and channels, facets, and angled mirrors is then reviewed. The authors concentrate on dry etched/wet etched device performance and reliability comparisons for buried heterostructure devices, and process improvements afforded by dry etching.

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