Schottky barrier formation in the low metal coverage limit
- 30 April 1993
- journal article
- Published by Elsevier in Progress in Surface Science
- Vol. 42 (1-4) , 281-295
- https://doi.org/10.1016/0079-6816(93)90076-8
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Semiconductor interface formation: theoretical aspectsApplied Surface Science, 1992
- On the physics of metal-semiconductor interfacesReports on Progress in Physics, 1990
- Semiconductor interface formation: The role of the induced density of interface statesApplied Surface Science, 1990
- Formation of Schottky barrier at the Tm/GaAs(110) interfacePhysical Review Letters, 1988
- On the formation of semiconductor interfacesJournal of Physics C: Solid State Physics, 1987
- Surface defects and Fermi‐level pinning in InPJournal of Vacuum Science and Technology, 1982
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- The metal-semiconductor interface: Si (111) and zincblende (110) junctionsJournal of Physics C: Solid State Physics, 1977
- Theory of Surface StatesPhysical Review B, 1965