Measurement of the minority carrier mobility in the base of heterojunction bipolar transistors using a magnetotransport method
- 25 September 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (13) , 1883-1884
- https://doi.org/10.1063/1.114364
Abstract
The minority carrier mobility in the base of an InP/GaInAs heterojunction bipolar transistor (HBT) is obtained by measuring the change in base current induced by a magnetic field applied perpendicular to the direction of the current flow. The obtained mobility is consistent with results of the zero‐field time of flight technique.Keywords
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