Laser-induced recrystallization and damage in GaAs
- 15 January 1979
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (2) , 153-155
- https://doi.org/10.1063/1.90710
Abstract
We have investigated the recrystallization of ion-implanted amorphous GaAs using a frequency-doubled 10−8-s pulsed Nd : YAG laser. The best results were obtained by spatially overlapping laser pulses at 20 MW/cm2. At power densities above 20 MW/cm2, not only does the GaAs surface begin to show uneven solidification, but also an increasing degree of disorder is revealed in Raman scattering and by a broad hump in the spectrum of channeled He-ion backscattering. This laser-induced damage is similar for single-crystal and ion-implanted GaAs samples. We attribute the damage at high power densities to the loss of arsenic and subsequent rapid cooling of a gallium-rich liquid.Keywords
This publication has 10 references indexed in Scilit:
- Epitaxial laser crystallization of thin-film amorphous siliconApplied Physics Letters, 1978
- Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiationApplied Physics Letters, 1978
- Laser reordering of implanted amorphous layers in GaAsSolid-State Electronics, 1978
- Annealing of Te-implanted GaAs by ruby laser irradiationApplied Physics Letters, 1978
- Detection of excess crystalline As and Sb in III-V oxide interfaces by Raman scatteringApplied Physics Letters, 1977
- Observations of phonon line broadening in the III-V semiconductors by surface reflection Raman scatteringPhysical Review B, 1974
- Disorder-Activated Acoustic Mode in Raman Spectrum ofPhysical Review Letters, 1972
- Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded SemiconductorsPhysical Review Letters, 1971
- Temperature Dependence of the Energy Gap in GaAs and GaPJournal of Applied Physics, 1969
- Thermal conductivity of silicon, germanium, III–V compounds and III–V alloysSolid-State Electronics, 1967