Ionizing Radiation Effects on Various Commercial NMOS Microprocessors
- 1 January 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 24 (6) , 2169-2171
- https://doi.org/10.1109/tns.1977.4329185
Abstract
Recent results of ionizing radiation tests indicate that popular commercial NMOS microprocessors are very vulnerable to total ionizing dose. Samples of five device types from six manufacturers were dynamically exposed to Co 60 irradiation. Failure thresholds as low as 1000 Rads (Si) were observed and the entire sample population was dead after exposure to 3000 Rads (Si). The predominant failure mode is the failure to respond to control commands and is caused by shifts in the threshold voltage. Experimental devices made with 700 A° hardened gate oxide raised the failure threshold to 104 Rads (Si). Dynamic irradiation of microprocessor systems yielded failures consistent with the biased static irradiation results.Keywords
This publication has 2 references indexed in Scilit:
- Radiation Effects on Commercial 4-Kilobit NMOS MemoriesIEEE Transactions on Nuclear Science, 1976
- Process Optimization of Radiation-Hardened CMOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1975