A 1.9-GHz DECT CMOS power amplifier with fully integrated multilayer LTCC passives
- 1 June 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 11 (6) , 249-251
- https://doi.org/10.1109/7260.928928
Abstract
We present the first demonstration of a CMOS power amplifier (PA) utilizing fully integrated multilayer low-temperature co-fired ceramic (LTCC) high-Q passives for 1.9-GHz digital European cordless telecommunications (DECT) applications. The inductor and capacitor library were built in a multilayer LTCC board using a compact topology. An inductor Q-factor as high as 100 with a self-resonant frequency (SRF) as high as 8 GHz was demonstrated. Measured results of the CMOS-LTCC PA show good agreement with the simulated results exhibiting 48% power added efficiency, 26-dBm output power and 17-dB gain at 1.9 GHz with a 3.3-V drain supply voltage. This result is the first significant step toward a compact DECT transceiver module development utilizing fully integrated multilayer LTCC passives and a standard CMOS technology.Keywords
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