Ion beam induced epitaxy of (100) and (111) GaAs
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 449-452
- https://doi.org/10.1016/0168-583x(89)90823-9
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Direct measurement of solid-phase epitaxial growth kinetics in GaAs by time-resolved reflectivityJournal of Applied Physics, 1985
- Ion implantation and low-temperature epitaxial regrowth of GaAsJournal of Applied Physics, 1981