Gate-Induced Drain Leakage in Ldd and Fully-Overlapped Ldd Mosfets
- 1 January 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A new LDD structure: total overlap with polysilicon spacer (TOPS)IEEE Electron Device Letters, 1990
- Subbreakdown drain leakage current in MOSFETIEEE Electron Device Letters, 1987