Relief-type diffraction grating by amorphous chalcogenide films

Abstract
In As‐Se‐ (S) ‐Ge amorphous films, a remarkable difference of chemical etching rate between the heat‐treated state and the light‐irradiated state has been observed. Utilizing this characteristic, a relief‐type diffraction grating of the amorphous film was obtained (the pitch between grating lines, 0.86 μm). This grating has achieved a high diffraction efficiency of 15.8%, which was about 10 times greater than before chemical etching.

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