AlAs Phonon parameters and heterostructure characterization
- 30 June 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 62 (9) , 645-647
- https://doi.org/10.1016/0038-1098(87)90207-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxyJournal of Applied Physics, 1985
- Folded acoustic and quantized optic phonons in (GaAl)As superlatticesPhysical Review B, 1985
- "Folded" optical phonons insuperlatticesPhysical Review B, 1984
- Infrared optical characterization of GaAsAlxGa1−xAs submicron heterostructuresSolid State Communications, 1981
- Anomalous structure in the far infrared spectrum of CdTeInternational Journal of Infrared and Millimeter Waves, 1981
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Infrared reflectivity spectra and Raman spectra of Ga1−xAlxAs mixed crystalsJournal of Applied Physics, 1979
- Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAsPhysical Review B, 1978
- Refractive Index of AlAsJournal of Applied Physics, 1971
- Infrared Reflection Spectra ofMixed CrystalsPhysical Review B, 1970