HIGH-FIELD HALL EFFECT OF SEMICONDUCTING CdS
- 15 February 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 10 (4) , 128-129
- https://doi.org/10.1063/1.1754877
Abstract
Hall voltage and conductivity of semiconducting CdS crystals with different mobilities have been measured at high pulsed electric fields. The electron density is nearly constant in a wide range of field which includes the field of current saturation. At fields above 2.1 × 103 V/cm, electron multiplication due to impact ionization is observed. In the case of an electric field parallel to the c axis of the crystal, the Hall drift velocity at the saturation field is determined by the interaction of electrons with off‐axis shear waves of sound.Keywords
This publication has 5 references indexed in Scilit:
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