Substrate current in GaAs MESFET's
- 1 September 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 26 (9) , 1359-1361
- https://doi.org/10.1109/t-ed.1979.19606
Abstract
It is shown that the substrate current in GaAs MESFET's may be related to the electron injection into the substrate region adjacent to the high-field domain in the active layer. A simple one-dimensional calculation shows that the substrate current Isubis proportional toV\min{ds}\max{1/2}andn\min{0}\max{1/4}where Vdsis the drain-to-source voltage, n0is the doping density in the active layer. Atn_{0} = 10^{17}cm-3andV_{ds} \simeq 10V we estimateI_{\sub} \sim 50mA per millimeter gate in good agreement with experimental results.Keywords
This publication has 0 references indexed in Scilit: