Nonexponential relaxation of photoinduced conductance in organic field effect transistors

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Abstract
We report detailed studies of the slow relaxation of the photoinduced excess charge carriers in organic metal-insulator-semiconductor field effect transistors consisting of poly(3-hexylthiophene) as the active layer. The relaxation process cannot be physically explained by processes, which lead to a simple or a stretched-exponential decay behavior. Models based on serial relaxation dynamics due to a hierarchy of systems with increasing spatial separation of the photo-generated negative and positive charges are used to explain the results. In order to explain the observed trend, the model is further modified by introducing a gate voltage dependent coulombic distribution manifested by the trapped negative charge carriers.
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