A calculation of the thermodynamic first order amorphous semiconductor to metallic liquid transition temperature

1 January 1979

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 50 (1) , 97
https://doi.org/10.1063/1.31740

Abstract

We have used available thermodynamic data to calculate the thermal properties for a first order transition between the solid four coordinated amorphous semiconductor and the metallic liquid states for amorphous Ge. We calculate a transition temperature of 969 °K (crystal‐liquid T_M =1210 °K), a transition enthalpy of 5.94 kcal/g‐atom (endothermic for the amorphous four coordinated to dense metallic liquid transition), and a transition entropy of 6.13 cal/g‐atom °K. The corresponding transition temperature for Si, estimated by scaling to the melting points, is 1349 °K (T_M=1685 °K).

Keywords

GERMANIUM
AMORPHOUS STATE
ORDER−DISORDER TRANSFORMATIONS
LIQUIDS
METALS
TRANSITION TEMPERATURE
TRANSITION HEAT
ENTHALPHY
HIGH TEMPERATURE

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