Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices

24 April 1995

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 2397, 283-294
https://doi.org/10.1117/12.206878

Abstract

We describe the deposition and characterization of single layers, homo-heterojunctions and superlattices of the Al_xGa_1-xN and In_xGa_1-xN material systems. Measurements are discussed indicating of 2D electron gas at heterojunction interfaces. Several photonic devices such as UV detectors, quarter wave reflector stacks, light emitting diodes and optically pumped lasing cavities are also described.

Keywords

LIGHT EMITTING DIODE
HETEROJUNCTIONS
ELECTRONS
INTERFACES
LIGHT EMITTING DIODES
SUPERLATTICES
OPTICAL PUMPING
OPTOELECTRONIC DEVICES

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