Electrical properties of bulk solution grown GaP and GaAs crystals
- 31 January 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (1) , 37-40
- https://doi.org/10.1016/0038-1101(70)90004-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Cristallisation du phosphure de gallium a partir d'une fonte stoechiometrique et en solution de galliumMaterials Research Bulletin, 1968
- The Elastic Constants of Gallium PhosphideJournal of Applied Physics, 1968
- Trapping analysis in gallium arsenideSolid State Communications, 1968
- Electron scattering mechanisms in n-type epitaxial GaPJournal of Physics and Chemistry of Solids, 1966
- Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSbJournal of the Physics Society Japan, 1964
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- Optical absorption in n-type gallium phosphideJournal of Physics and Chemistry of Solids, 1959
- Hall Effect and Density of States in GermaniumPhysical Review B, 1955
- Deformation Potentials and Mobilities in Non-Polar CrystalsPhysical Review B, 1950