X and Ku Band High Efficiency Power GaAs FETs
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 83 (0149645X) , 265-267
- https://doi.org/10.1109/mwsym.1983.1130879
Abstract
New structual, high productive power GaAs FETs have been developed, achieving power added efficiency ranging from 30 % to 40 % with 1.5 W power output between 10 to 15.2 GHz on mass production basis. Internally matched devices with two chips have exhibited the supreme performance of 3 W power output with as high as 40 % power added efficiency at 15.2 GHz. These devices have structual features on the 0.5 µm deep recessed gate utilizing photoresist-free gate formation and the sidewall metallization combined with PHS and via hole structure.Keywords
This publication has 2 references indexed in Scilit:
- K-and Ka-band Power GaAs FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A novel Via Hole P.H.S. structure in K-band power GaAs FETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981