Minority-carrier injection into diffused region of small n + - p junction
- 20 August 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (17) , 619-620
- https://doi.org/10.1049/el:19810434
Abstract
A comparison is made between one- and two-dimensional analysis of injection into the diffused region of small n+-p diodes using a numerical iterative scheme. Results are presented which show clearly the limitation of the one-dimensional analysis.Keywords
This publication has 0 references indexed in Scilit: