Contact Resistance Measurement Technique For Amorphous Semiconductors
- 12 March 1986
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 0617, 56-62
- https://doi.org/10.1117/12.961073
Abstract
A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented and the significance of these values to solar cell applications discussed.Keywords
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