New High‐Resolution and High‐Sensitivity Deep UV, X‐Ray, and Electron‐Beam Resists

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Abstract
A new family of highly sensitive resists for deep‐UV, x‐ray, and electron‐beam exposure capable of better than 100 nm resolution and very high pattern aspect ratio has been investigated. The resists are based on epoxidized novolac resins sensitized with acid‐generating compounds. Upon exposure to ionizing radiation, strong acids are formed which, during a subsequent bake, cause crosslinking of the resin by epoxide ring opening. Formulations made with purified and fractionated commercial resins show extremely high e‐beam sensitivity, up to 0.2 μC/cm2 at 20 kV and 0.5 μC/cm2 at 50 kV with pattern aspect ratios higher than two and resolution better than 0.25 μm lines and spaces.

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