Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors

22 January 1976

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 12 (2) , 42-43
https://doi.org/10.1049/el:19760033

Abstract

The low-frequency noise in GaAs m.e.s. f.e.t.s was measured continuously for temperatures varying from 80 to 310K. It presented distinct maxima, suggesting the presence of several g.r. processes. The shift of these peaks at different frequencies (500 Hz to 1 MHz) allowed us to obtain the time constants and the activation energies of four trapping levels. The noise reported here could stem from multilevel trapping in the channel.

Keywords

TRAPPING LEVELS
TIME CONSTANTS
80 TO 310K
MESFET
GAAS SCHOTTKY GATE FIELD EFFECT TRANSISTOR
GENERATION RECOMBINATION NOISE
LOW FREQUENCY NOISE
ACTIVATION ENERGIES

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