Non‐Ideal Exciton Gas in Silicon and Its Condensation into Electron‐Hole Plasma Drops

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Abstract
Experimental data on the kinetics of the recombination via exciton states are presented for pure Si excited by a pulsed electron beam in the temperature region 4.2 to 300°K. The energy spectrum of the exciton gas is discussed as a function of the exciton concentration Δnex and exciton radius rex. It is shown that for T ⪅ 77 °K at Δnexz ⪆ 1.5 × 10−2 r the exciton gas becomes non‐ideal, and must be regarded in the limiting case, near Δnex ⪆ r as an electron‐hole plasma. At T ⪅ 20°K and Δnex ⪆ 1.5 × 10−2r in the luminescence spectrum a new band appears with a maximum at hvmax = 1.088 eV. It corresponds to the exciton condensation into electron‐hole plasma drops. The nature of an other line with a maximum at hvmax = 1.081 eV is discussed in connection with the possibility of exciton molecular complex formation.

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