Residual Stresses in Thin Single Crystals Bonded to an Amorphous Substrate: Silicon-Integrated Circuits
- 1 March 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (3) , 1182-1185
- https://doi.org/10.1063/1.1660164
Abstract
Strains and stresses in the surface area of silicon‐integrated circuits have been examined by a double‐crystal x‐ray diffraction method. The observed topography of the surface of the silicon single crystal is discussed with a simple model. By this nondestructive method strain fields produced by different bonding procedures can be compared and devices which are more likely to crack during temperature changes or by small mechanical loads may be identified.This publication has 4 references indexed in Scilit:
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- Thermally-induced cracking in the fabrication of semiconductor devicesIRE Transactions on Electron Devices, 1959
- Notizen: Röntgenographische Abbildung des Verzerrungsfeldes einzelner Versetzungen in Germanium-EinkristallenZeitschrift für Naturforschung A, 1958
- Thermal Stresses in a Rectangular Plate Clamped Along an EdgeJournal of Applied Mechanics, 1949