Electronic properties of HgTe/HgCdTe heterojunctions
- 31 December 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 196 (1) , 665-668
- https://doi.org/10.1016/0039-6028(88)90758-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Linearity (commutativity and transitivity) of valence-band discontinuity in heterojunctions with Te-based II-VI semiconductors: CdTe, HgTe, and ZnTePhysical Review Letters, 1987
- Hole Hall-mobility enhancement inHgTe−Hg1−xCdxTeheterojunctionsPhysical Review B, 1986
- Determination of transport coefficients in high mobility heterostructure systems in the presence of parallel conductionApplied Physics Letters, 1986
- Quantum Hall effect inAs-InP heterojunctions with two populated electric subbandsPhysical Review B, 1986
- Contiguous two-dimensional regions in the quantized Hall regimePhysical Review B, 1985
- Interface states and subbands in HgTe-CdTe heterostructuresPhysical Review B, 1985
- Effects of quasi-interface states in HgTe-CdTe superlatticesPhysical Review B, 1985
- Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistorsApplied Physics A, 1984
- Quantum transport in GaInAs-AlInAs heterojunctions, and the influence of intersubband scatteringSolid State Communications, 1982
- Explanation of quantized-Hall-resistance plateaus in heterojunction inversion layersPhysical Review B, 1981