Self-excitation of 2D plasmons in resonant tunneling diodes
- 1 October 1998
- journal article
- Published by Pleiades Publishing Ltd in JETP Letters
- Vol. 68 (8) , 662-668
- https://doi.org/10.1134/1.567925
Abstract
Resonant tunneling is accompanied by the accumulation of 2D electrons in the quantum well between the barriers of resonant tunneling diodes. In high-quality structures this gives a Z-shaped current-voltage characteristic, and it is shown that self-excitation of 2D plasmons occurs in this quantum well for any external circuit at completely realistic parameters of the structures.Keywords
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