Enhanced Two-Dimensional Growth of GaAs on InP by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- 1 August 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (8A) , L1085-1087
- https://doi.org/10.1143/jjap.32.l1085
Abstract
Growth modes and lattice relaxation processes in the heteroepitaxial growth of GaAs films on InP substrates by molecular beam epitaxy (MBE) with atomic hydrogen irradiation have been investigated for different growth temperatures. We have found that atomic hydrogen delays the onset of island growth and lattice relaxation at a substrate temperature of 350°C because of the presence and interaction of hydrogen atoms with incoming atoms on the surface at this temperature range. At 450°C, no significant differences in the lattice relaxation process between the MBE growth with and without the atomic hydrogen irradiation were observed. This change in the growth mode is believed to be an important factor which affects the mechanism of strain relaxation.Keywords
This publication has 13 references indexed in Scilit:
- Virtual-surfactant epitaxy of strained InAs/Al0.48In0.52As quantum wellsApplied Physics Letters, 1993
- Low Temperature Surface Cleaning of InP by Irradiation of Atomic HydrogenJapanese Journal of Applied Physics, 1993
- Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? –Bi as a Surfactant with Small Self-Incorporation–Japanese Journal of Applied Physics, 1993
- First-principles calculations of molecular- and atomic-hydrogen reactions on As-terminated GaAs(100) surfacesPhysical Review B, 1992
- Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen IrradiationJapanese Journal of Applied Physics, 1992
- Defect self-annihilation in surfactant-mediated epitaxial growthPhysical Review Letters, 1991
- Interaction of hydrogen at GaAs(100) surfacesSurface Science, 1991
- Electronic and structural properties of hydrogen on semiconductor surfacesPhysica B: Condensed Matter, 1991
- Microstructure and strain relief of Ge films grown layer by layer on Si(001)Physical Review B, 1990
- Surfactants in epitaxial growthPhysical Review Letters, 1989