New type InGaAs/InP heterostructure avalanche photodiode with buffer layer

1 July 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (7) , 179-181
https://doi.org/10.1109/edl.1981.25390

Abstract

A new type heterostructure avalanche photodiode (HAPD) is proposed and successfully fabricated by liquid phase epitaxy and Zn-diffusion. The HAPD has been made from a successively grown wafer which consists of In 0.53 Ga 0.47 As light absorption layer, InGaAsP buffer layers and InP avalanche multiplication layer on n-InP substrate. Dark current density of 1 × 10 ^-4 Acm ^-2 at 0.9 V B is achieved. When illuminating with 1.15 µm light, the diode has a maximum multiplication gain of 880 and an external quantum efficiency of 40%. The quantum efficiency is markedly improved than that of previously reported HAPD.

Keywords

INDIUM GALLIUM ARSENIDE
INDIUM PHOSPHIDE
AVALANCHE PHOTODIODES
BUFFER LAYERS
SUBSTRATES
EPITAXIAL GROWTH
ABSORPTION
DARK CURRENT
SEMICONDUCTOR DIODES
OPTICAL FIBER DEVICES