High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ gate dielectrics with equivalent oxide thickness 5-10 Å

7 November 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 16-17
https://doi.org/10.1109/vlsit.2000.852751

Abstract

[[abstract]]High quality La2O3 and Al2O3 are fabricated with EOT of 4.8 and 9.6 Å, leakage current of 0.06 and 0.4 A/cm-2 and Dit of both 3×1010 eV-1/cm2, respectively. The high K is further evidenced from high MOSFET's Id and gm with low IOFF. Good SILC and QBD are obtained and comparable with SiO2. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H2 annealing up to 550°C[[fileno]]2060114030001[[department]]工程與系統科學

Keywords

LEAKAGE CURRENT
EQUIVALENT OXIDE THICKNESS
THERMODYNAMIC STABILITY

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