Deep surface states on the interface between SiC and its native thermal oxide
- 1 October 1997
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics Letters
- Vol. 23 (10) , 798-800
- https://doi.org/10.1134/1.1261806
Abstract
Deep surface states are discovered on the interface between 6H-SiC and its native thermal oxide by analyzing the C-V characteristics of metal-oxide-semiconductor structures measured at a high temperature (600 K). The maximum of the density of states distributed according to energy (Dtm=2×1012 cm−2· eV−1) is at an energy about 1.2 eV below the bottom of the conduction band of SiC. It is postulated that the states discovered are similar in nature to the Pb centers observed in the SiO2/Si system.Keywords
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