The energetics of the relief of misfit strain in InASyP1−y films grown on 〈100〉 InP substrates by means of three sets of dislocations
- 15 May 1995
- journal article
- Published by Elsevier in Scripta Metallurgica et Materialia
- Vol. 32 (10) , 1565-1571
- https://doi.org/10.1016/0956-716x(94)00023-b
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The nature of dislocation sources and strain relief in InAsyP1−y films grown on 〈100〉 InP substratesActa Metallurgica et Materialia, 1994
- The energy of arrays of dislocations in an anisotropic half-spacePhilosophical Magazine A, 1994
- The energy of an array of dislocations: Implications for strain relaxation in semiconductor heterostructuresPhilosophical Magazine A, 1990
- Atomic structure of dislocations in silicon, germanium and diamondPhilosophical Magazine A, 1990