Ultra Broadband Low Power MMIC Amplifier

1 October 2000

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 1-4
https://doi.org/10.1109/euma.2000.338730

Abstract

A low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 μm T-gate InP HEMTs with 2×25 μm gate periphery. This compact microstrip MMIC is only 1.5 mm2 in size. It exhibits gain of 12.5±1 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain-bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band.

Keywords

MMICS
BROADBAND AMPLIFIERS
HEMTS
INDIUM PHOSPHIDE
MICROSTRIP
GAIN
NOISE FIGURE
SEMICONDUCTOR DEVICE MODELING
RESISTORS
DISTRIBUTED AMPLIFIERS

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