Polaron Percolation in Diluted Magnetic Semiconductors
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- 31 May 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 88 (24) , 247202
- https://doi.org/10.1103/physrevlett.88.247202
Abstract
We theoretically study the development of spontaneous magnetization in diluted magnetic semiconductors as arising from a percolation of bound magnetic polarons. Within the framework of a generalized percolation theory we derive analytic expressions for the Curie temperature and the magnetization in the limit of low carrier density, obtaining excellent quantitative agreement with Monte Carlo simulation results and good qualitative agreement with experimental results.Keywords
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This publication has 24 references indexed in Scilit:
- Ferromagnetism in Magnetically Doped III-V SemiconductorsPhysical Review Letters, 2001
- Comment on “Theory of Diluted Magnetic Semiconductor Ferromagnetism”Physical Review Letters, 2001
- Theory of Diluted Magnetic Semiconductor FerromagnetismPhysical Review Letters, 2000
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Properties of ferromagnetic III–V semiconductorsJournal of Magnetism and Magnetic Materials, 1999
- Ferromagnetism and Its Stability in the Diluted Magnetic Semiconductor (In, Mn)AsPhysical Review Letters, 1998
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- Polaron-polaron interactions in diluted magnetic semiconductorsJournal of Applied Physics, 1996
- Effect of Fluctuations of Magnetization on the Bound Magnetic Polaron: Comparison with ExperimentPhysical Review Letters, 1982
- Stability condition for the paramagnetic polaron in a magnetic semiconductorSolid State Communications, 1970