InAs/(Al,Ga)Sb quantum well structures for magnetic sensors
- 1 July 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 34 (4) , 1300-1302
- https://doi.org/10.1109/20.706528
Abstract
No abstract availableKeywords
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- Well width dependence of electron transport in molecular-beam epitaxially grown InAs/AlSb quantum wellsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
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