Photoelectronic properties of p-ZnTe

Publisher Website
Google Scholar
Abstract
Highly photosensitive single crystals of ZnTe have been prepared by annealing in an atmosphere containing Zn and Ga or In and quenching to room temperature. The material remains p type under illumination and displays many of the characteristics of other II‐VI photoconductors, including strong trapping and thermal quenching. An electron‐trapping level at about 0.24 eV below the conduction band is inferred from the data and associated with the Ga or In impurity. The peak sensitivity is comparable to that of the better CdS or CdSe photoconductors. Acceptor levels at about 0.06, 0.13, and 0.22 eV are also observed.