The effect of source impedance on linearity in InGaP/GaAs power HBTs
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (0149645X) , 555-558
- https://doi.org/10.1109/mwsym.1996.510995
Abstract
L-band power amplifiers operating with high efficiency and linearity at a single, low supply voltage are in strong demand in mobile communication systems. This paper reports the effect of source impedance on the phase distortion and the adjacent channel power (ACP) for a /spl pi//4-shift QPSK modulated signal in the InGaP/GaAs power heterojunction bipolar transistors (HBTs). Our results show that the phase distortion and the ACP of our HBTs are improved by adding a positive reactance to a gain-matched source impedance. The ACP for a 50 kHz offset is -49.2 dBc with a power-added efficiency (PAE) of 56% at a output power (P/sub out/) of 31 dBm under a supply voltage of 3.5 V.Keywords
This publication has 1 reference indexed in Scilit:
- Quasi-linear amplification using self-phase distortion compensation techniqueIEEE Transactions on Microwave Theory and Techniques, 1995