A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

1 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10889299,p. 203-206
https://doi.org/10.1109/bipol.2003.1274966

Abstract

We present for the first time a very high performance SiGe HBT with f/sub T/ = 200 GHz and f/sub max/ = 280 GHz that has been successfully integrated with IBM's standard 0.13 /spl mu/m foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.

Keywords

HETEROJUNCTION BIPOLAR TRANSISTORS
BICMOS INTEGRATED CIRCUITS
SEMICONDUCTOR DEVICE MODELING
SEMICONDUCTOR DEVICE MANUFACTURE
SEMICONDUCTOR PROCESS MODELING
SILICON COMPOUNDS

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