Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films
- 1 February 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (2) , 861-868
- https://doi.org/10.1063/1.328850
Abstract
A series of codeposited alloy films of Pt‐Si with a composition changing from Pt75Si25 to Pt50Si50 and of Pd‐Si changing from Pd75Si25 to Pd67Si33 have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I‐V measurement of Schottky barrier height, glancing incidence x‐ray diffraction, and cross‐sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd2Si have been achieved.This publication has 13 references indexed in Scilit:
- Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si filmsApplied Physics Letters, 1980
- Shallow silicide-to-silicon contacts: The case of amorphous-Pd80Si20–to–siliconApplied Physics Letters, 1980
- Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloysApplied Physics Letters, 1980
- Shallow silicide contactJournal of Applied Physics, 1980
- Contact reaction between Si and Pd-W alloy filmsJournal of Applied Physics, 1979
- Silicide formation with Pd-V alloys and bilayersJournal of Applied Physics, 1979
- Transmission electron microscopy of cross sections of large scale integrated circuitsIEEE Transactions on Electron Devices, 1976
- Thermal stability of thin PtSi films on silicon substratesJournal of Applied Physics, 1972
- Metallurgical properties and electrical characteristics of palladium silicide-silicon contactsSolid-State Electronics, 1971
- Reverse current-voltage characteristics of metal-silicide Schottky diodesSolid-State Electronics, 1970