Effect of Substrate Temperature on the Selectivity in Low Pressure Chemical Vapor Deposition of Aluminum

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Abstract
Current voltage curves, Mott‐Schottky data, and impedance spectroscopic measurements are taken at the contact for bare and Pt‐coated electrodes. In the transition range from anodic to cathodic currents ( evolution) drastic changes of the electrode response occur (i.e., changes in reverse current densities, barrier heights , photovoltages, and impedance response) whereas flatband potentials derived from Mott‐Schottky measurements remain essentially constant. These results recall to mind the barrier height as a fundamental parameter defining the interdependence of flatband and redox potential. Barrier heights are discussed in terms of the Schottky diode theory with a decrease in attributed to hydrogen saturation of the metal or to cathodic corosion of bare (formation of a quasi‐ohmic contact ). Parameters of the electrochemical charge‐transfer reaction and parameter changes of the semiconductor/surface barrier at are separated with impedance spectroscopy. Results are used for the discussion of Tafel slopes of semiconductor electrodes in the forward bias range.

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