Electrorefraction in GaInAs/InP multiple quantum well heterostructures

14 April 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (8) , 458-460
https://doi.org/10.1049/el:19880310

Abstract

We report the first absolute measurement of electric-fieldinduced changes in refractive index in GalnAs quantum well heterostructures. Even for wavelengths as far as 40meV below the absorption edge, excitonic effects dominate electro-optic phase modulation. This effect close to resonance yields index changes two orders of magnitude larger than in bulk material. We find that the size of the index change, its dependence on applied voltage, and its behaviour with wavelength are well described in terms of the quantum confined Stark effect on excitonic absorption.

Keywords

ELECTRIC-FIELD-INDUCED CHANGES IN REFRACTIVE INDEX
EXCITONIC EFFECTS
QUANTUM CONFINED STARK EFFECT ON EXCITONIC ABSORPTION
ELECTROREFRACTION
INDEX CHANGE
MULTIPLE QUANTUM WELL HETEROSTRUCTURES
EFFECT CLOSE TO RESONANCE
MQW
ABSORPTION EDGE
GAINAS-INP
SEMICONDUCTORS
WAVELENGTH DEPENDENCE
ELECTRO-OPTIC PHASE MODULATION
ABSOLUTE MEASUREMENT
DEPENDENCE ON APPLIED VOLTAGE
QCSE

This publication has 0 references indexed in Scilit: