Strained InGaAs quantum well lasers grown on (111)B GaAs

9 April 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (8) , 705-706
https://doi.org/10.1049/el:19920446

Abstract

The growth by molecular beam epitaxy (MBE) of AlGaAs/GaAs/InGaAs strained quantum well lasers on GaAs (111)B substrates is reported. An excellent transparency current density J₀ of 190 A/cm² and an internal loss α_i of 11cm^-1, were obtained on broad area lasers, which are potential surface emitting blue-green light sources.

Keywords

BROAD AREA LASERS
TRANSPARENCY CURRENT DENSITY
STRAINED QUANTUM WELL LASERS
ALGAAS-GAAS-INGAAS
MOLECULAR BEAM EPITAXY
INTERNAL LOSS
SURFACE EMITTING BLUE-GREEN LIGHT SOURCES
III-V SEMICONDUCTORS
GAAS

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